International Patent: METHOD FOR FABRICATING A HEMT DEVICE IN AN ATOMIC LAYER ETCHING REACTOR AND USE OF THE METHOD IN FABRICATION OF A GALLIUM-NITRIDE-BASED HEMT

GENEVA, June 26 -- ALIXLABS AB filed a patent application (EP2025/085155) for “METHOD FOR FABRICATING A HEMT DEVICE IN AN ATOMIC LAYER ETCHING REACTOR AND USE OF THE METHOD IN FABRICATION OF A GALLIUM-NITRIDE-BASED HEMT”. With publication no. WO/2026/119915, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10P 50/24

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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