International Patent: METHOD FOR DEPOSITING THICK LAYERS, IN PARTICULAR OF GAN, ON SILICON OR SAPPHIRE

GENEVA, Aug. 31 -- AIXTRON LTD. filed a patent application (EP2026/054345) for “METHOD FOR DEPOSITING THICK LAYERS, IN PARTICULAR OF GAN, ON SILICON OR SAPPHIRE”. With publication no. WO/2026/175876, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C23C 16/30

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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