International Patent: METHOD AND SYSTEM FOR GROWING CRYSTAL BY MEANS OF EPITAXY, AND METHOD AND SYSTEM FOR GROWING EPITAXIAL WAFER BY MEANS OF EPITAXY

GENEVA, June 24 -- BOYA ADVANCED MATERIALS CO., LTD. filed a patent application (CN2024/134835) for “METHOD AND SYSTEM FOR GROWING CRYSTAL BY MEANS OF EPITAXY, AND METHOD AND SYSTEM FOR GROWING EPITAXIAL WAFER BY MEANS OF EPITAXY”. With publication no. WO/2026/112819, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C30B 29/36

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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