International Patent: METAL DIELECTRIC STACK STRUCTURE OF VERTICAL TRANSISTOR, USING HEAT TREATMENT, AND MANUFACTURING METHOD THEREFOR

GENEVA, July 31 -- HOSEO UNIVERSITY ACADEMIC COOPERATION FOUNDATION filed a patent application (KR2026/001006) for “METAL DIELECTRIC STACK STRUCTURE OF VERTICAL TRANSISTOR, USING HEAT TREATMENT, AND MANUFACTURING METHOD THEREFOR”. With publication no. WO/2026/160779, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10D 30/01

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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