INTERNATIONAL PATENT: KUNMING UNIVERSITY OF SCIENCE AND TECHNOLOGY, 昆明理工大学 FILES APPLICATION FOR "METHOD FOR DESIGNING AND PREPARING SILICON-BASED HIGH-ENTROPY ALLOY USING PHOTOVOLTAIC SILICON WASTE BY MEANS OF COMPENSATION METHOD"

GENEVA, Feb. 22 -- KUNMING UNIVERSITY OF SCIENCE AND TECHNOLOGY (No. 68, Wenchang Road, Yieryi StreetKunming, Yunnan 650093), 昆明理工大学 (中国云南省昆明市一二一大街文昌路68号) filed a patent application (PCT/CN2025/100687) for "METHOD FOR DESIGNING AND PREPARING SILICON-BASED HIGH-ENTROPY ALLOY USING PHOTOVOLTAIC SILICON WASTE BY MEANS OF COMPENSATION METHOD" on Jun 12, 2025. With publication no. WO/2026/036887, the details related to the patent application was published on Feb 19, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is m...