INTERNATIONAL PATENT: ITES CO., LTD., 株式会社アイテス FILES APPLICATION FOR "METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE"

GENEVA, Feb. 3 -- ITES CO., LTD. (1-60, Kuribayashi-cho, Otsu-shi, Shiga5202151), 株式会社アイテス (滋賀県大津市栗林町１番６０号) filed a patent application (PCT/JP2024/026416) for "METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE" on Jul 24, 2024. With publication no. WO/2026/022963, the details related to the patent application was published on Jan 29, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ...