International Patent: IMPROVED GATE DIELECTRIC MULTILAYER FOR USE IN GATE-INDUCED QUANTUM DOT DEVICES

GENEVA, July 6 -- NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO filed a patent application (EP2025/085280) for “IMPROVED GATE DIELECTRIC MULTILAYER FOR USE IN GATE-INDUCED QUANTUM DOT DEVICES”. With publication no. WO/2026/139192, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10D 48/00

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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