INTERNATIONAL PATENT: HUBEI JIUFENGSHAN LABORATORY, 湖北九峰山实验室 FILES APPLICATION FOR "WIDE-BANDGAP SEMICONDUCTOR DEVICE TERMINAL STRUCTURE AND MANUFACTURING METHOD THEREFOR"

GENEVA, Jan. 17 -- HUBEI JIUFENGSHAN LABORATORY (No.9, Jiulonghu Street, East Lake High-tech Development ZoneWuhan, Hubei 430073), 湖北九峰山实验室 (中国湖北省武汉市东湖新技术开发区九龙湖街9号) filed a patent application (PCT/CN2025/080688) for "WIDE-BANDGAP SEMICONDUCTOR DEVICE TERMINAL STRUCTURE AND MANUFACTURING METHOD THEREFOR" on Mar 05, 2025. With publication no. WO/2026/011802, the details related to the patent application was published on Jan 15, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, whic...