INTERNATIONAL PATENT: HITACHI ENERGY LTD FILES APPLICATION FOR "POWER SEMICONDUCTOR MODULE AND METHOD FOR CREATING A CURRENT BYPASS IN THE POWER SEMICONDUCTOR MODULE"

GENEVA, March 9 -- HITACHI ENERGY LTD (Brown-Boveri-Strasse 58050 Zurich) filed a patent application (PCT/EP2025/074380) for "POWER SEMICONDUCTOR MODULE AND METHOD FOR CREATING A CURRENT BYPASS IN THE POWER SEMICONDUCTOR MODULE" on Aug 27, 2025. With publication no. WO/2026/047041, the details related to the patent application was published on Mar 05, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): BEYER, Harald (Aavorstadt 395600 Lenzburg), GUILLON, David (Rempen 138857 Vorderthal), SANTOLARIA, Lluis (Zeughausstrasse 365600 Lenzburg)

Abstract: A power semiconductor module (100), comprising...