INTERNATIONAL PATENT: HANGZHOU GAREN SEMICONDUCTOR CO., LTD, 杭州镓仁半导体有限公司 FILES APPLICATION FOR "APPARATUS FOR GROWING LARGE-SIZE GALLIUM OXIDE CRYSTAL AND GROWTH METHOD"

Posted On: 2026-04-17

GENEVA, April 17 -- HANGZHOU GAREN SEMICONDUCTOR CO., LTD (Room 101, South Side of Building 1, No. 389, Hongxing Road, Xiaoshan Robot TownEconomic and Technological Development Zone, Xiaoshan DistrictHangzhou, Zhejiang 311231), 杭州镓仁半导体有限公司 (中国浙江省杭州市萧山区经济技术开发区萧山机器人小镇鸿兴路389号1幢南侧101室) filed a patent application (PCT/CN2025/110346) for "APPARATUS FOR GROWING LARGE-SIZE GALLIUM OXIDE CRYSTAL, AND GROWTH METHOD" on Jul 24, 2025. With publicatio...

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इस लेख के रीप्रिंट को खरीदने या इस प्रकाशन का पूरा फ़ीड प्राप्त करने के लिए, कृपया हमे संपर्क करें.

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INTERNATIONAL PATENT: HANGZHOU GAREN SEMICONDUCTOR CO., LTD, 杭州镓仁半导体有限公司 FILES APPLICATION FOR "APPARATUS FOR GROWING LARGE-SIZE GALLIUM OXIDE CRYSTAL AND GROWTH METHOD"