International Patent: GATE TRENCH SEMICONDUCTOR DEVICE WITH DEEP SHIELDING REGIONS AND TUNEABLE CONTACT DENSITY

GENEVA, July 1 -- NEXPERIA B.V. filed a patent application (EP2025/086654) for “GATE TRENCH SEMICONDUCTOR DEVICE WITH DEEP SHIELDING REGIONS AND TUNEABLE CONTACT DENSITY”. With publication no. WO/2026/125624, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10D 30/01

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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