International Patent: GATE OXIDE STACK FOR SIC MOSFET

GENEVA, Oct. 1 -- MICROCHIP TECHNOLOGY INCORPORATED filed a patent application (US2025/035395) for “GATE OXIDE STACK FOR SIC MOSFET”. With publication no. WO/2026/192605, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10D 30/01

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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