INTERNATIONAL PATENT: FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, 中国科学院福建物质结构研究所 FILES APPLICATION FOR "APPLICATION OF CHARGE-TRANSFER-COATED SEMICONDUCTOR MATERIAL IN GAS SENSOR DEVICE"

GENEVA, Feb. 20 -- FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER (No. 155, Yangqiao West Road, GulouFuzhou, Fujian 350002), 中国科学院福建物质结构研究所 (中国福建省福州市鼓楼区杨桥西路155号) filed a patent application (PCT/CN2024/124517) for "APPLICATION OF CHARGE-TRANSFER-COATED SEMICONDUCTOR MATERIAL IN GAS SENSOR DEVICE" on Oct 12, 2024. With publication no. WO/2026/036502, the details related to the patent application was published on Feb 19, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) syst...