INTERNATIONAL PATENT: FUJI ELECTRIC CO., LTD., 富士電機株式会社 FILES APPLICATION FOR "SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE"

GENEVA, June 10 -- FUJI ELECTRIC CO., LTD. (1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-shi, Kanagawa2109530), 富士電機株式会社 (神奈川県川崎市川崎区田辺新田１番１号) filed a patent application (PCT/JP2024/035348) for "SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE" on Oct 02, 2024. With publication no. WO/2025/115393, the details related to the patent application was published on Jun 05, 2025.

Notably, the patent application was submitted under the Inter...