International Patent: ELECTROSTATIC DISCHARGE DISSIPATION FIELD-EFFECT TRANSISTOR (ESDDFET) HAVING A BODY WITHOUT LIGHTLY DOPED POCKET OR A HALO REGION TO INCREASE BREAKDOWN VOLTAGE

GENEVA, Sept. 7 -- QUALCOMM INCORPORATED filed a patent application (US2026/014899) for “ELECTROSTATIC DISCHARGE DISSIPATION FIELD-EFFECT TRANSISTOR (ESDDFET) HAVING A BODY WITHOUT LIGHTLY DOPED POCKET OR A HALO REGION TO INCREASE BREAKDOWN VOLTAGE”. With publication no. WO/2026/182923, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10D 89/60

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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