International Patent: CIRCULARITY CONTROL DURING CRYOGENIC HIGH ASPECT RATIO AMORPHOUS CARBON LAYER ETCH

GENEVA, Oct. 9 -- LAM RESEARCH CORPORATION filed a patent application (US2026/020315) for “CIRCULARITY CONTROL DURING CRYOGENIC HIGH ASPECT RATIO AMORPHOUS CARBON LAYER ETCH”. With publication no. WO/2026/212863, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10P 50/00

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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