INTERNATIONAL PATENT: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 24 RESEARCH INSTITUTE, 中国电子科技集团公司第二十四研究所 FILES APPLICATION FOR "HIGH-SPEED GERMANIUM-SILICON HBT STRUCTURE HAVING LOW BASE REGION CONNECTION RESISTANCE AND MANUFACTURING METHOD THEREFOR"

GENEVA, Sept. 8 -- CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 24 RESEARCH INSTITUTE (No 14，Huayuan Rd NanpingNan'an District, Chongqing 400060), 中国电子科技集团公司第二十四研究所 (中国重庆市南岸区南坪花园路14号) filed a patent application (PCT/CN2024/116226) for "HIGH-SPEED GERMANIUM-SILICON HBT STRUCTURE HAVING LOW BASE REGION CONNECTION RESISTANCE AND MANUFACTURING METHOD THEREFOR" on Sep 02, 2024. With publication no. WO/2025/179818, the details related to the patent application was published on Sep 04, 2025.

Notably, the patent applicati...