INTERNATIONAL PATENT: BEIJING MICROELECTRONICS TECHNOLOGY INSTITUTE, 北京微电子技术研究所, BEIJING MXTRONICS TECHNOLOGY CO., LTD, 北京时代民芯科技有限公司 FILES APPLICATION FOR "SINGLE-EVENT GATE RUPTURE-RESISTANT SIC MOSFET AND MANUFACTURING METHOD THEREFOR"

Posted On: 2025-12-15

GENEVA, Dec. 15 -- BEIJING MICROELECTRONICS TECHNOLOGY INSTITUTE (No.2, Siyingmen North Road, DonggaodiFengtai District, Beijing 100076), 北京微电子技术研究所 (中国北京市丰台区东高地四营门北路2号), BEIJING MXTRONICS TECHNOLOGY CO., LTD (No.2, Siyingmen North Road, DonggaodiFengtai District, Beijing 100076), 北京时代民芯科技有限公司 (中国北京市丰台区东高地四营门北路2号) filed a patent application (PCT/CN2024/126...

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INTERNATIONAL PATENT: BEIJING MICROELECTRONICS TECHNOLOGY INSTITUTE, 北京微电子技术研究所, BEIJING MXTRONICS TECHNOLOGY CO., LTD, 北京时代民芯科技有限公司 FILES APPLICATION FOR "SINGLE-EVENT GATE RUPTURE-RESISTANT SIC MOSFET AND MANUFACTURING METHOD THEREFOR"