INTERNATIONAL PATENT: APPLE INC. FILES APPLICATION FOR "LOW NOISE STACKED FIELD EFFECT TRANSISTOR DESIGN"

GENEVA, March 31 -- APPLE INC. (One Apple Park WayCupertino, California 95014) filed a patent application (PCT/US2025/047485) for "LOW NOISE STACKED FIELD EFFECT TRANSISTOR DESIGN" on Sep 23, 2025. With publication no. WO/2026/064765, the details related to the patent application was published on Mar 26, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SIPRAK, Domagoj (One Apple Park WayCupertino, California 95014)

Abstract: A low-noise amplifier structure utilizing horizontally stacked field-effect transistors (FETs) is described. The stacked FET structure includes two FETs stacked horizont...