International Patent: AMORPHPOUS SILICON GAPFILL USING ICP PLASMA AT LOW PRESSURE AND HIGHER TEMPERATURE

GENEVA, July 18 -- APPLIED MATERIALS, INC. filed a patent application (US2026/010571) for “AMORPHPOUS SILICON GAPFILL USING ICP PLASMA AT LOW PRESSURE AND HIGHER TEMPERATURE”. With publication no. WO/2026/151851, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10P 14/24

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Disclaimer: Curated by HT Syndication....