INTERNATIONAL PATENT: AIXTRON SE FILES APPLICATION FOR "METHOD FOR PRODUCING A CMOS STRUCTURE BONDED TO A HEAT DISSIPATION LAYER"

GENEVA, May 4 -- AIXTRON SE (Dornkaulstr. 252134 Herzogenrath) filed a patent application (PCT/EP2025/079724) for "METHOD FOR PRODUCING A CMOS STRUCTURE BONDED TO A HEAT DISSIPATION LAYER" on Oct 15, 2025. With publication no. WO/2026/087305, the details related to the patent application was published on Apr 30, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HAHN, Utz Herwig (Schonsweg 994730 Raeren), MAUDER, Christof (Am Branderhof 3552066 Aachen)

Abstract: The invention relates to a method for producing a CMOS layer structure bonded to a heat dissipation layer, comprising at least the fo...