INTERNATIONAL PATENT: AIXTRON SE FILES APPLICATION FOR "METHOD AND DEVICE FOR SEPARATING N-DOPED SIC"

GENEVA, June 2 -- AIXTRON SE (Dornkaulstr. 252134 Herzogenrath) filed a patent application (PCT/EP2024/082806) for "METHOD AND DEVICE FOR SEPARATING N-DOPED SIC" on Nov 19, 2024. With publication no. WO/2025/108923, the details related to the patent application was published on May 30, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): BOOKER, Pitsiri (Bergdriesch 2252062 Aachen), SUBRAMANIAM, Dinesh Kanna (Alte Vaalser StraBe 13152074 Aachen)

Abstract: The invention relates to a method for separating an SiC layer, wherein an NH3-containing first doping gas flow (D1), a second N2-containing ...