US Patent Issued to International Business Machines on April 7 for "High-density metal-insulator-metal capacitor integration wth nanosheet stack technology" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,759, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "High-density metal-insulator-metal capacitor... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,760, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of fabricati... Read More

US Patent Issued to Infineon Technologies Austria on April 7 for "Diode including a trench electrode subdivided into at least first and second parts" (German Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,761, issued on April 7, was assigned to Infineon Technologies Austria AG (Villach, Austria). "Diode including a trench electrode subdivided... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 7 for "Methods of manufacturing a semiconductor device with local isolation and a semiconductor device with local isolation" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,762, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Methods of manufacturing a semi... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 7 for "Semiconductor device structure with metal gate stack" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,763, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 7 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,764, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More

US Patent Issued to Etron Technology, Invention And Collaboration Laboratory on April 7 for "Transistor with low leakage currents and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,765, issued on April 7, was assigned to Etron Technology Inc. (Hsinchu, Taiwan) and Invention And Collaboration Laboratory Pte. Ltd. (Singap... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 7 for "Contact interface engineering for reducing contact resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,766, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Contact interface engineering for r... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 7 for "Dielectric layers for semiconductor devices and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,767, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Dielectric layers for semiconductor... Read More

US Patent Issued to NXP on April 7 for "FinFET with gate extension" (Dutch, Belgian, American Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,768, issued on April 7, was assigned to NXP B.V. (Eindhoven, Netherlands). "FinFET with gate extension" was invented by Viet Thanh Dinh (Le... Read More

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