US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITY on April 21 for "Memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,552, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan), NATIONAL TAIWAN UNIVERSITY (Tai... Read More

US Patent Issued to Semiconductor Energy Laboratory on April 21 for "Semiconductor device and electronic device" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,553, issued on April 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan). "Semiconductor device and electro... Read More

US Patent Issued to Intel on April 21 for "Multi-storage element single-transistor crosspoint memory systems at low temperatures" (Oregon Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,554, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Multi-storage element single-transistor crosspoint memory sys... Read More

US Patent Issued to International Business Machines on April 21 for "Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM" (New York, California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,555, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Multilayered magnetic free layer structure... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor device and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,556, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor device and method for manuf... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Memory device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,557, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory device" was invented by El... Read More

US Patent Issued to Shanghai Huali Microelectronics on April 21 for "ReRAM device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,558, issued on April 21, was assigned to Shanghai Huali Microelectronics Corp. (Shanghai). "ReRAM device and method for manufacturing the ... Read More

US Patent Issued to DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY on April 21 for "Non-volatile memory device and method for driving same" (South Korean Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,559, issued on April 21, was assigned to DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY (Daegu, South Korea). "Non-volatile memory de... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Semiconductor package" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,560, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package" was invented by Joo... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Method for fabricating a semiconductor device having back gate electrodes, active layers, and data lines" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,561, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Method for fabricating a semiconductor dev... Read More

• ««
• «
• 4299
• 4300
• 4301
• 4302
• 4303
• 4304
• 4305
• 4306
• 4307
• 4308
• »
• »»