US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 21 for "Memory device and operation method thereof, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,171, issued on April 21, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory device and operation method thereof,... Read More

US Patent Issued to Sandisk Technologies on April 21 for "Non-volatile memory with intelligent erase testing to avoid neighbor plane disturb" (Chinese, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,172, issued on April 21, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Non-volatile memory with intelligent erase testing... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Semiconductor memory device and method of operating the same" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,173, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device and method of ... Read More

US Patent Issued to MACRONIX International on April 21 for "Memory device and read voltage setting method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,174, issued on April 21, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Memory device and read voltage setting method... Read More

'छोटी लापरवाही से भी बड़े हादसे '

सीतामढ़ी, अप्रैल 21 -- सीतामढ़ी। स्कूली बच्चों व शिक्षकों ने मॉकड्रिल के माध्यम से अग्नि सुरक्षा का तरीका जाना। अग्निशमन सेवा सप्ताह के सातवें दिन अनुमंडल अग्निशामालय के अधिकारियों एवं कर्मियों द्वारा ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Three-dimensional semiconductor memory device, method of fabricating the same, and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,547, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional semiconductor memory dev... Read More

US Patent Issued to Yangtze Memory Technologies on April 21 for "Three-dimensional memory device and fabrication method" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,548, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three-dimensional memory device and fabrica... Read More

US Patent Issued to MACRONIX International on April 21 for "Memory device with reduced global selection line structures and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,549, issued on April 21, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Memory device with reduced global selection l... Read More

US Patent Issued to SK hynix on April 21 for "Memory device with defect-free slits" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,550, issued on April 21, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device with defect-free slits" was invented by Ho... Read More

US Patent Issued to Kioxia on April 21 for "Semiconductor storage device" (Japanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,551, issued on April 21, was assigned to Kioxia Corp. (Tokyo). "Semiconductor storage device" was invented by Go Oike (Mie Mie, Japan). A... Read More

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