US Patent Issued to Micron Technology on July 7 for "Semiconductor device having row decoder circuit" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,179, issued on July 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Semiconductor device having row decoder circuit" was invented... Read More

US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Memory core circuit having cell on periphery (CoP) structure and memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,180, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory core circuit having cell on periphery (... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 7 for "Memory circuits, memory structures, and methods for fabricating a memory device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,181, issued on July 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory circuits, memory structures, a... Read More

US Patent Issued to FIDELIX on July 7 for "Bit line pre-charge voltage generating circuit in semiconductor memory devices for reducing current consumption" (South Korean Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,182, issued on July 7, was assigned to FIDELIX Co. LTD. (Seongnam-si, South Korea). "Bit line pre-charge voltage generating circuit in semic... Read More

US Patent Issued to UNISANTIS ELECTRONICS SINGAPORE on July 7 for "Semiconductor memory cell having two gates and one channel layer" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,183, issued on July 7, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore). "Semiconductor memory cell having two gates an... Read More

US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Voltage regulator, memory device including voltage regulator, and operation method of memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,184, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Voltage regulator, memory device including vol... Read More

US Patent Issued to NORTHROP GRUMMAN SYSTEMS, The Regents of the University of California on July 7 for "Energy efficient compute-in-memory SRAM-C circuit architecture" (California, New York Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,185, issued on July 7, was assigned to NORTHROP GRUMMAN SYSTEMS Corp. (Falls Church, Va.) and The Regents of the University of California (Oa... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 7 for "Memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,186, issued on July 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory device" was invented by Cheng ... Read More

US Patent Issued to University of Cincinnati on July 7 for "Ferroelectric field effect transistors based approach for Euclidean distance calculation in neuromorphic hardware" (Ohio Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,187, issued on July 7, was assigned to University of Cincinnati (Cincinnati). "Ferroelectric field effect transistors based approach for Euc... Read More

US Patent Issued to Micron Technology on July 7 for "Microelectronic devices with mirrored blocks of multi-set staircased stadiums, and related systems and methods" (American, Swiss Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,188, issued on July 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Microelectronic devices with mirrored blocks of multi-set sta... Read More

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