India, Oct. 9 -- XMax Inc. (XMAX), announced on Friday that it has agreed to acquire Hexa Creation Inc., a U.S. developer of 1200-volt vertical gallium nitride power semiconductor technology for AI data center infrastructure and other high-voltage applications. The financial aspects of the deal is not revealed.
XMax said the deal extends its AI strategy into power infrastructure and diversifies its business. The material terms will be disclosed in a Form 8-K filing with the U.S. SEC. on October 9, 2026. Hexa Creation's roadmap centers on a 1200V vertical GaN trench MOSFET aimed at high-voltage markets beyond today's 650V-and-below range commercial GaN devices. The company holds an exclusive license to patents from a major U.S. public unive...