Japan Intellectual Property Rights: THREE-DIMENSIONAL NOR MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TRANSISTOR

Japan, Sept. 18 -- SUNRISE MEMORY CORP has got intellectual property rights for 'THREE-DIMENSIONAL NOR MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TRANSISTOR.' Other related details are as follows:

Application Number: JP,2025-108863

Category (FI): H10B51/20,H10B51/30

Stage: PROBLEM TO BE SOLVED: To solve such a problem that ferroelectric field effect transistors of the prior art have low endurance.SOLUTION: A memory structure 10 includes storage transistors 20 organized as horizontal NOR memory strings, and the storage transistors are thin-film ferroelectric field-effect transistors having a ferroelectric gate dielectric layer 26 formed adjacent a semiconductor channel region 25. The semiconductor channel region is formed by an oxide ...