Japan Intellectual Property Rights: SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Japan, Sept. 28 -- FUJI ELECTRIC CO LTD has got intellectual property rights for 'SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2022-193062

Category (FI): H01L29/78,658@F,H01L29/78,655@A,H10D30/66,201@D,H10D30/01,301@F,H10D30/66,101@H,H10D30/66,101@T,H10D30/66,102@D,H10D30/66,201@C,H10D30/66,101@M,H10D12/00,101@A,H10D30/66,102@S,H01L29/78,652@M,H01L29/78,653@C,H01L29/78,653@D,H01L29/78,652@J,H01L29/78,652@T

Stage: Grant (IP right granted following substantive examination.)

Filing Date: Dec. 1, 2022

Publication Date: June 13, 2024

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclai...