Japan Intellectual Property Rights: SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SILICON CARBIDE SEMICONDUCTOR DEVICE

Japan, Aug. 26 -- FUJI ELECTRIC CO LTD,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY has got intellectual property rights for 'SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SILICON CARBIDE SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2022-017532

Category (FI): H10D84/80,101@A,H10P30/20@Z,H10P30/20@F,H10D84/80,203@A,H10D30/66,201@A,H10D30/66,103,H10D30/66,101@T,H10D30/66,101@H,H10D30/66,101@C,H10D30/01,301@A,H01L21/265@F,H01L21/265@Z,H01L29/78,652@N,H01L27/06,102@A,H01L29/78,657@A,H01L29/78,658@A,H01L29/78,652@C,H01L29/78,652@J,H01L29/78,652@H,H01L29/78,653@A,H01L29/78,652@T

Stage: Grant (IP right granted following substantive examination.)

Filing Date: Feb....