Japan Intellectual Property Rights: SILICON CARBIDE MOSFET TRANSISTOR DEVICE WITH IMPROVED CHARACTERISTIC AND CORRESPONDING MANUFACTURING PROCESS

Japan, March 26 -- STMICROELECTRONICS SRL has got intellectual property rights for 'SILICON CARBIDE MOSFET TRANSISTOR DEVICE WITH IMPROVED CHARACTERISTIC AND CORRESPONDING MANUFACTURING PROCESS.' Other related details are as follows:

Application Number: JP,2021-207993

Category (FI): H01L29/78,652@J,H01L29/78,652@M,H01L29/78,652@T,H01L29/78,655@A,H01L29/78,658@A,H01L29/78,658@E,H10D12/00,101@A,H10D30/01,301@A,H10D30/01,301@E,H10D30/66,101@H,H10D30/66,101@T,H10D30/66,102@D,H10D30/66,102@S

Stage: Grant (IP right granted following substantive examination.)

Filing Date: Dec. 22, 2021

Publication Date: July 6, 2022

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

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