Japan Intellectual Property Rights: SiC CRYSTAL SUBSTRATE HAVING LATTICE PLANE ORIENTATION OPTIMUM FOR CRACK REDUCTION, AND MANUFACTURING METHOD THEREOF

Japan, Feb. 24 -- SICRYSTAL GMBH has got intellectual property rights for 'SiC CRYSTAL SUBSTRATE HAVING LATTICE PLANE ORIENTATION OPTIMUM FOR CRACK REDUCTION, AND MANUFACTURING METHOD THEREOF.' Other related details are as follows:

Application Number: JP,2021-115838

Category (FI): C30B29/36@A

Stage: PROBLEM TO BE SOLVED: To provide a single crystal 4H-SiC substrate having a specific orientation of crystal structures that is set so as to reduce or even eliminate occurrence of cracks or fissures during mechanical processing, and a manufacturing method thereof.SOLUTION: A single crystal 4H-SiC substrate has a longitudinal axis C and a side face parallel to the longitudinal axis and curved at least partially. Crystal structures of the 4H-SiC...