Japan Intellectual Property Rights: SCHOTTKY BARRIER DIODE

Japan, Sept. 16 -- ROHM CO LTD has got intellectual property rights for 'SCHOTTKY BARRIER DIODE.' Other related details are as follows:

Application Number: JP,2022-178599

Category (FI): H10D64/23@D,H10D64/64,H01L29/86,301@F,H01L29/48@F,H10D8/60@F

Stage: PROBLEM TO BE SOLVED: To provide a Schottky barrier diode capable of reducing a forward voltage.SOLUTION: A Schottky barrier diode comprises: a first conductivity type semiconductor substrate 1; a first conductivity type semiconductor layer 2 including a first conductivity type region 21 and a first conductivity type impurity region 22; a first electrode layer 3; a second electrode layer 4; a second external terminal 7 conducting to the first electrode layer; and a second external termina...