Japan Intellectual Property Rights: METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE

Japan, July 14 -- NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY has got intellectual property rights for 'METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE.' Other related details are as follows:

Application Number: JP,2024-137020

Category (FI): C30B29/38@C,C30B33/00,C23C14/06@A

Stage: PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride substrate having a small surface pore diameter and high thermal conductivity.SOLUTION: A method for manufacturing a polycrystalline aluminum nitride substrate includes: a step (A) of providing a polycrystalline aluminum nitride substrate whose surface is to be polished, causing a plasma formed of nitrogen and argon to act on a first layer aluminum nitride film generated by ...