Japan, Oct. 7 -- SHIN ETSU HANDOTAI CO LTD has got intellectual property rights for 'MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD OF HYBRID IC, AND THE NITRIDE SEMICONDUCTOR SUBSTRATE.' Other related details are as follows:
Application Number: JP,2023-090721
Category (FI): H10P14/20,H01L21/20,H01L21/205,H10P14/24,C30B29/38@D
Stage: Grant (IP right granted following substantive examination.)
Filing Date: June 1, 2023
Publication Date: Dec. 12, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication....