Japan Intellectual Property Rights: HETEROJUNCTION STRUCTURE DEVICE AND ITS MANUFACTURING METHOD, FIELD EFFECT TRANSISTOR USING THE SAME, ARTIFICIAL VISUAL SYSTEM USING THE SAME, SOLAR CELL USING THE SAME, GAS SENSOR USING THE SAME, AND PIEZOELECTRIC ELEMENT USING THE SAME

Japan, Feb. 6 -- RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIV has got intellectual property rights for 'HETEROJUNCTION STRUCTURE DEVICE AND ITS MANUFACTURING METHOD, FIELD EFFECT TRANSISTOR USING THE SAME, ARTIFICIAL VISUAL SYSTEM USING THE SAME, SOLAR CELL USING THE SAME, GAS SENSOR USING THE SAME, AND PIEZOELECTRIC ELEMENT USING THE SAME.' Other related details are as follows:

Application Number: JP,2024-100275

Category (FI): H10D30/67,102@T,H01L31/10@E,H01L29/78,618@B,H01L29/78,617@U,H01L29/78,617@T,H10F30/298,H10F77/12,H10F30/28,H10D30/67,102@U,H10D30/67,103@B

Stage: Grant (IP right granted following substantive examination.)

Filing Date: June 21, 2024

Publication Date: June 16, 2025

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