Japan Intellectual Property Rights: HEATING METHOD OF GALLIUM NITRIDE, MANUFACTURING METHOD OF GALLIUM NITRIDE SEMICONDUCTOR AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE INCLUDING GALLIUM NITRIDE

Japan, Jan. 28 -- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,TOKAI NATIONAL HIGHER EDUCATION & RESEARCH SYSTEM has got intellectual property rights for 'HEATING METHOD OF GALLIUM NITRIDE, MANUFACTURING METHOD OF GALLIUM NITRIDE SEMICONDUCTOR AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE INCLUDING GALLIUM NITRIDE.' Other related details are as follows:

Application Number: JP,2022-069325

Category (FI): H10P34/42@Z,H10P30/28@C,H10D30/47,201,H10D30/01,401,H01L29/80@H,H01L21/265,601@A,H01L21/268@Z

Stage: Grant (IP right document published.)

Filing Date: April 20, 2022

Publication Date: Nov. 1, 2023

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

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