Intellectual Property India Publishes Patent Application for Six-Transistor Sram Cell Using Junctionless Gate-All-Around Nanowire Field-Effect Transistors

MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202641110059 A) filed by Vellore Institute Of Technology on September 14, 2026, for Six-Transistor Sram Cell Using Junctionless Gate-All-Around Nanowire Field-Effect Transistors.

Inventors include Nawaz Shafi; Siddhant Pandey; Roumak Saha; and Mediboyina Taniskha.

The application for the patent was published on September 18, 2026, under issue no. 38/2026.

Abstract: ABSTRACT SIX-TRANSISTOR SRAM CELL USING JUNCTIONLESS GATE-ALL-AROUND NANOWIRE FIELD-EFFECT TRANSISTORS A six-transistor (6T) static random-access memory (SRAM) cell includes six junctionless gate-all-around nanowire field-effect transistors (FETs). Each junctionless gate-all-around nanow...