Intellectual Property India Publishes Patent Application for Semiconductor Device With An Etch Stop Layer At The Middle Of Line

MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202647082935 A) filed by International Business Machines on July 06, 2026, for Semiconductor Device With An Etch Stop Layer At The Middle Of Line.

Inventors include Qin, Liqiao; Li, Tao; Xie, Ruilong Number; and Miller, Eric.

The application for the patent was published on July 10, 2026, under issue no. 28/2026.

Abstract: SEMICONDUCTOR DEVICE WITH AN ETCH STOP LAYER AT THE MIDDLE OF LINE A semiconductor device includes a first transistor adjacent to a second transistor and an etch stop layer within an interlayer dialectic (ILD) to separate a lateral contact and a plurality of backside source/drain region-gate cut dielectric layers. The lateral conta...