MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202621016592 A) filed by Mr. Hitesh Kumar; Dr. Kaushal Kumar Nigam; Dr. Chitrakant Sahu; Mr. Bandi Venkata Chandan; and Mr. Ashish Patle on February 14, 2026, for Recessed Dual-Material Gate Mos-Hemt Biosensor With Passivation-Defined Sensing Cavity.
Inventors include Mr. Hitesh Kumar; Dr. Kaushal Kumar Nigam; Dr. Chitrakant Sahu; Mr. Bandi Venkata Chandan; and Mr. Ashish Patle.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: The present invention relates to a biosensing field-effect transistor based on a recessed metal–oxide–semiconductor high electron mobility transistor (MOS-HEMT) architecture for...