Intellectual Property India Publishes Patent Application for Method For Spatial Variability Analysis Of Electrical Parameters In Hetero-Dielectric Double-Gate Tunnel Field-Effect Transistors

MUMBAI, India, June 30 -- Intellectual Property India has published a patent application (202641075864 A) filed by Vellore Institute Of Technology on June 19, 2026, for Method For Spatial Variability Analysis Of Electrical Parameters In Hetero-Dielectric Double-Gate Tunnel Field-Effect Transistors.

Inventors include Shanidul Hoque; Riddhi Dutta; and Aryan Bose.

The application for the patent was published on June 26, 2026, under issue no. 26/2026.

Abstract: A computer-implemented method (100) for spatial variability analysis of electrical parameters in a hetero-dielectric double-gate tunnel field-effect transistor is disclosed. The method comprises generating a semiconductor device model through a structural modelling module (102), perfo...