MUMBAI, India, July 24 -- Intellectual Property India has published a patent application (202417075184 A) filed by Yangtze Memory Technologies Co. , Ltd. on October 04, 2024, for High Bandwidth Memory Systems And Devices.
Inventors include Xia, Zhiliang; and Huo, Zongliang.
The application for the patent was published on July 17, 2026, under issue no. 29/2026.
Abstract: The present disclosure relates methods, devices, systems, and techniques for high bandwidth memory (HBM). An example semiconductor device includes a first layer, a second layer, a first die between the first layer and the second layer, and a second die stacked together along a first direction. Each of the first die and the second die has a conductive layer. The first die ...