Intellectual Property India Publishes Patent Application for Engineering Stable Near-Infrared Defect Emission Centres In Hexagonal Boron Nitride Via Krypton Ion Implantation

MUMBAI, India, Aug. 10 -- Intellectual Property India has published a patent application (202621071884 A) filed by Indian Institute Of Technology Bombay; and Savitribai Phule Pune University Sppu on June 10, 2026, for Engineering Stable Near-Infrared Defect Emission Centres In Hexagonal Boron Nitride Via Krypton Ion Implantation.

Inventors include Shyam, Ikshvaku; Majumder, Amrita; Khunte, Janhavi Jayawant; Ekta; Kumar, Anshuman; Sonawane, Amol; Dahiwale, Shailendra; and Dhole, Sanjay Daga.

The application for the patent was published on July 31, 2026, under issue no. 31/2026.

Abstract: Embodiments of the disclosed technology relate to generation of optically active defect centers in hexagonal boron nitride by krypton ion implantation. A...