Intellectual Property India Publishes Patent Application for Dual-K Spacer Structure For Multi-Channel Gate-All-Around Nanosheet Field-Effect Transistors And Method Therof

MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202641127097 A) filed by Srm University-Ap on October 24, 2026, for Dual-K Spacer Structure For Multi-Channel Gate-All-Around Nanosheet Field-Effect Transistors And Method Therof.

Inventors include Piduguralla Kranthi; Annavarapu Ratnavali; and Dr. Patta Supraja.

The application for the patent was published on October 30, 2026, under issue no. 44/2026.

Abstract: The present invention provides a multi-channel gate-all-around nanosheet field-effect transistor (100) comprises vertically stacked silicon nanosheets (110a, 110b, 110c) between a source region (104) and a drain region (106), a metal gate electrode (108) surrounding the nanosheets, and a segm...