MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202647104457 A) filed by Applied Materials, Inc. on August 31, 2026, for Barrier And Liner Treatment Using Dual Radio Frequency Capacitive Couple Plasma For Metal Interconnects.
Inventors include Hwang, Shinjae; and Kashefi, Kevin.
The application for the patent was published on September 18, 2026, under issue no. 38/2026.
Abstract: A processing method includes depositing a barrier layer on a field region and sidewalls of a via of an interconnect structure, wherein depositing the barrier layer comprises establishing a single RF frequency capacitively coupled plasma (CCP) using a first radio frequency (RF) generator by delivering a first RF signal f...