Intellectual Property India Publishes Patent Application for An Electrostatic Doped Magnesium Silicide Based Tunnel Field Effect Transistor System With Enhanced Reliability And Reduced Interface Trap Sensitivity

MUMBAI, India, June 26 -- Intellectual Property India has published a patent application (202621053121 A) filed by Mr. Bandi Venkata Chandan; Dr. Kaushal Kumar Nigam; Mr. Gadi Harshavardhan; Dr. Dharmender; Dr. Mukesh Kumar Bind; and Parvin Akhter on April 26, 2026, for An Electrostatic Doped Magnesium Silicide Based Tunnel Field Effect Transistor System With Enhanced Reliability And Reduced Interface Trap Sensitivity.

Inventors include Mr. Bandi Venkata Chandan; Dr. Kaushal Kumar Nigam; Mr. Gadi Harshavardhan; Dr. Dharmender; Dr. Mukesh Kumar Bind; and Parvin Akhter.

The application for the patent was published on June 19, 2026, under issue no. 25/2026.

Abstract: The present invention relates to an electrostatically doped magnesium sili...