Intellectual Property India Publishes Patent Application for A Tri-State Dopingless Double-Gate Tunnel Field-Effect Transistor Device

MUMBAI, India, July 31 -- Intellectual Property India has published a patent application (202411100970 A) filed by Motilal Nehru National Institute Of Technology on December 19, 2024, for A Tri-State Dopingless Double-Gate Tunnel Field-Effect Transistor Device.

Inventor includes Kumari Nibha Priyadarshani.

The application for the patent was published on July 24, 2026, under issue no. 30/2026.

Abstract: ABSTRACT “A TRI-STATE DOPINGLESS DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTOR DEVICE” The present invention provides a tri-state dopingless double-gate tunnel field-effect transistor device (100) comprises a drain electrode (1), a source electrode (2) a set of gate electrodes (3, 4, 7), a dielectric layer (5), a channel region (6)The drain e...