Intellectual Property India Publishes Patent Application for A Spacer-Free Synthetic-Antiferromagnet-Like Magnetic Reference Structure For Mtj And Mram Devices

MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202641092541 A) filed by Indian Institute Of Science on July 30, 2026, for A Spacer-Free Synthetic-Antiferromagnet-Like Magnetic Reference Structure For Mtj And Mram Devices.

Inventors include Bhagwati Prasad; and Anup Kumar Bera.

The application for the patent was published on August 07, 2026, under issue no. 32/2026.

Abstract: “A SPACER-FREE SYNTHETIC-ANTIFERROMAGNET-LIKE MAGNETIC REFERENCE STRUCTURE FOR MTJ AND MRAM DEVICES” The present disclosure relates to spacer-free synthetic-antiferromagnet-(SAF) like magnetic reference structure for magnetic tunnel junctions and MRAM devices. In an embodiment, spacer-free-SAF like magnetic reference structu...