Intellectual Property India Publishes Patent Application for A Gate-All-Around Charge Plasma Complementary Fet (gaa-Cp-Cfet)

MUMBAI, India, July 24 -- Intellectual Property India has published a patent application (202611056763 A) filed by Gagan; Akansha Aggarwal; Devender Kumar Soni; Himanshu Marothya; and Vishwas Acharya on May 05, 2026, for A Gate-All-Around Charge Plasma Complementary Fet (gaa-Cp-Cfet).

Inventors include Gagan; Akansha Aggarwal; Devender Kumar Soni; Himanshu Marothya; and Vishwas Acharya.

The application for the patent was published on July 17, 2026, under issue no. 29/2026.

Abstract: The present invention relates to a Gate-All-Around Charge Plasma Complementary Field Effect Transistor (GAA-CP-CFET) and its method of fabrication. The device comprises vertically stacked NMOS and PMOS transistors integrated monolithically through a common ga...