Intellectual Property India Publishes Patent Application for 'Single Gate Bias Power Amplifier Circuit With Tailored Threshold Transistors And Manufacturing Methods Thereof' Filed by Agnit Semiconductors Private Ltd.

MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202541001775 A) filed by Agnit Semiconductors Private Ltd., Bengaluru, Karnataka, on Jan. 8, 2025, for 'single gate bias power amplifier circuit with tailored threshold transistors and manufacturing methods thereof.'

Inventor(s) include Digbijoy Neelim Nath; and Hareesh Chandrasekar.

The application for the patent was published on Feb. 13, under issue no. 07/2026.

According to the abstract released by the Intellectual Property India: "The invention relates to an innovative power amplifier (PA) circuit design aimed at enhancing efficiency and simplifying circuit complexity for modern wireless communication systems. This design employs a hybrid archit...